SEOUL, South Korea / RankWire.AI / – Samsung Electronics revealed its latest memory and storage strategies designed for artificial intelligence infrastructure during the 2026 OCP Global Summit. The event took place in San Jose, California, from October 12 to 15, where the company detailed three key technological directions: high-performance memory, Compute Express Link-based memory expansion, and advanced solid-state drives. Additionally, Samsung announced plans for a joint CXL demonstration with Advanced Micro Devices. This strategic approach aims to address memory bottlenecks that limit the performance of larger AI workloads.
Samsung centered its strategy on enhancing speed, scalability, and data durability. The first pillar emphasizes high-performance memory, with the company showcasing customized high-bandwidth memory and HBM5, its eighth-generation HBM. The second pillar utilizes CXL technology to extend memory capacity beyond what standard servers typically support. The third focuses on data management and storage through cutting-edge enterprise SSDs and software solutions. Samsung asserts that these three elements work synergistically to improve the overall efficiency of AI systems.
The company linked its strategy to the increasing demand for memory driven by AI inference workloads and larger models. As models grow in size, they generate more data during inference, necessitating greater memory capacity. Current server configurations often limit the amount of memory accessible to each processor. Samsung suggests that CXL can help overcome these restrictions without requiring a complete system redesign. The company also emphasized key-value cache optimization, which allows AI models to reuse data previously processed instead of recomputing it, thereby improving efficiency.
Samsung and AMD Showcase CXL Memory Expansion Solutions
At the summit, Samsung and AMD demonstrated a CXL-based memory expansion solution that enables processors to share memory resources and scale capacity flexibly across AI systems. Samsung confirmed that this technology has been validated in real-world system environments. The two companies signed a memorandum of understanding in March 2026, focusing on next-generation AI memory and computing innovations. Additionally, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss collaborations in memory and foundry manufacturing.
Samsung also presented CMM-D, its CXL-compatible DRAM memory module configured for memory pooling. This setup connects multiple CXL memory units into a shared pool accessible by different systems. Other exhibits included processing-in-memory technology, which performs certain calculations within memory chips to reduce data transfer needs. Samsung showcased 2-nanometer gate-all-around wafers and Groq LPU wafers, with Nvidia’s Groq 3 LPX system also featured among its displays.
Early Validation Access for Partners on Memory Technologies
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, discussed the strategy. He emphasized that as AI models expand and inference workloads increase, expanding memory capacity and bandwidth becomes more critical. Shim also noted that Samsung is working closely with global partners from early development stages to co-design and validate technologies, ensuring memory products meet specific system needs before commercial release.
Samsung MAX Lab supports this initiative by enabling customers to test memory and storage solutions under real AI workloads. This allows for validation of technologies such as PIM and next-generation SSDs prior to market launch. Samsung participated in the summit as a Diamond Sponsor of the Open Compute Project event. This appearance follows Samsung’s presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. The company continues to emphasize the importance of memory capacity as a key factor in AI infrastructure performance.